Dual N-channel and P-channel MOSFETs in a compact SOT-563 package. Features 20V drain-source breakdown voltage and 600mA continuous drain current. Offers low 1.2 Ohm drain-source on-resistance at a nominal Vgs of 800mV. Designed for surface mounting with a maximum power dissipation of 250mW. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI1016X-T1-E3 technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
600mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.2R
Dual Supply Voltage
20V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
6V
Height
0.6mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
800mV
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Rds On Max
700mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
800mV
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1016X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1016X-T1-E3 to view detailed technical specifications.
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