Dual-channel N-channel and P-channel JFET for general-purpose small signal applications. Features a 20V drain-source voltage and 370mA continuous drain current. Offers a maximum drain-source on-resistance of 700mΩ. Packaged in a compact SOT-563 surface-mount case, this component operates from -55°C to 150°C and is RoHS compliant.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1016X-T1-GE3 technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
370mA
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700mR
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
6V
Height
0.6mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
700mR
RoHS Compliant
Yes
Series
TrenchFET®
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1016X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1016X-T1-GE3 to view detailed technical specifications.
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