N-channel MOSFET with 60V drain-source breakdown voltage and 330mA continuous drain current. Features a low 1.25 Ohm drain-source on-resistance at 2.5V nominal gate-source voltage. Packaged in a compact SOT-416 surface-mount case, this component offers 250mW power dissipation and operates across a -55°C to 150°C temperature range. RoHS compliant and lead-free.
PackageSOT-416
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1022R-T1-E3 technical specifications.
General
Package/Case
SOT-416
Continuous Drain Current (ID)
330mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.25R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3R
Gate to Source Voltage (Vgs)
20V
Height
0.7mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
1.25R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
35ns
Turn-On Delay Time
25ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1022R-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1022R-T1-E3 to view detailed technical specifications.
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