P-channel MOSFET featuring 20V drain-source voltage and 370mA continuous drain current. This surface mount device offers a low 1.2 Ohm maximum drain-source on-resistance at a nominal Vgs of -450mV. Operating across a wide temperature range of -55°C to 150°C, it boasts a fast 46ns fall time and a maximum power dissipation of 250mW. The component is housed in a compact SOT-563-6 package and is RoHS compliant.
PackageSOT-563-6
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1023X-T1-E3 technical specifications.
General
Package/Case
SOT-563-6
Continuous Drain Current (ID)
370mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.2R
Fall Time
46ns
Gate to Source Voltage (Vgs)
6V
Height
0.6mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
-450mV
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Weight
0.000289oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1023X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1023X-T1-E3 to view detailed technical specifications.
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