P-channel MOSFET featuring 20V drain-source voltage and 370mA continuous drain current. This surface mount device offers a low 1.2 Ohm maximum drain-source on-resistance at a nominal Vgs of -450mV. Operating across a wide temperature range of -55°C to 150°C, it boasts a fast 46ns fall time and a maximum power dissipation of 250mW. The component is housed in a compact SOT-563-6 package and is RoHS compliant.
PackageSOT-563-6
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1023X-T1-E3 technical specifications.
General
| Package/Case | SOT-563-6 |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Weight | 0.000289oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1023X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1023X-T1-E3 to view detailed technical specifications.
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