P-channel MOSFET featuring 60V drain-source voltage and 190mA continuous drain current. Surface mountable in a compact SOT563F package, this component offers a maximum drain-source on-resistance of 4 Ohms. Operating across a temperature range of -55°C to 150°C, it supports a gate-source voltage up to 20V. This RoHS compliant device includes two channels and a threshold voltage of -3V.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1025X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
190mA
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
4R
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
23pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1025X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1025X-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.