P-channel MOSFET featuring 60V drain-source voltage and 190mA continuous drain current. Surface mountable in a compact SOT563F package, this component offers a maximum drain-source on-resistance of 4 Ohms. Operating across a temperature range of -55°C to 150°C, it supports a gate-source voltage up to 20V. This RoHS compliant device includes two channels and a threshold voltage of -3V.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1025X-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 23pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1025X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1025X-T1-E3 to view detailed technical specifications.
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