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Technical Specifications
Vishay SI1026X-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 305mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 30pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1026X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1026X-T1-E3 to view detailed technical specifications.
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