Dual N-channel and P-channel Junction Field-Effect Transistor (JFET) for surface mount applications. Features 60V drain-source voltage (Vdss) and a maximum continuous drain current of 305mA for the N-channel and 190mA for the P-channel. Offers a low drain-source on-resistance (Rds On) of 1.4 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Packaged in a compact 1.7mm x 1.2mm x 0.6mm SOT-563F case, supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power280mW
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Technical Specifications
Vishay SI1029X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
305mA
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
4R
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
280mW
Radiation Hardening
No
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1029X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1029X-T1-GE3 to view detailed technical specifications.
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