P-channel, small-signal JFET transistor for general-purpose applications. Features a continuous drain current of 140mA and a drain-source voltage of -20V. Offers a maximum power dissipation of 250mW and a drain-source on-resistance of 8 Ohms. Packaged in a 3-pin SC-75A surface-mount case, this component operates from -55°C to 150°C and is halogen-free and RoHS compliant.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1031R-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
140mA
Drain to Source Resistance
20R
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
8R
Fall Time
30ns
Gate to Source Voltage (Vgs)
6V
Height
0.7mm
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
8R
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
900mV
Turn-Off Delay Time
60ns
Turn-On Delay Time
55ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1031R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1031R-T1-GE3 to view detailed technical specifications.
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