P-channel, small-signal JFET transistor for general-purpose applications. Features a continuous drain current of 140mA and a drain-source voltage of -20V. Offers a maximum power dissipation of 250mW and a drain-source on-resistance of 8 Ohms. Packaged in a 3-pin SC-75A surface-mount case, this component operates from -55°C to 150°C and is halogen-free and RoHS compliant.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1031R-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 8R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
| Width | 0.76mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1031R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1031R-T1-GE3 to view detailed technical specifications.
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