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Technical Specifications
Vishay SI1031X-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 155mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 6V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 340mW |
| Rds On Max | 8R |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
| Weight | 0.001058oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI1031X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1031X-T1-E3 to view detailed technical specifications.
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