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Technical Specifications
Vishay SI1032R-T1 technical specifications.
General
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 280mW |
| RoHS Compliant | No |
| Series | SI1 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 0.76mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI1032R-T1 Datasheet
Download the complete datasheet for Vishay SI1032R-T1 to view detailed technical specifications.
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