N-Channel MOSFET, 20V Vdss, 140mA continuous drain current, and 5 Ohm Rds On Max. This surface mount component features a SOT-416 package, operating from -55°C to 150°C with a maximum power dissipation of 250mW. Designed for efficient switching, it offers turn-on and turn-off delay times of 50ns and 25ns fall time respectively, with a 6V gate-source voltage. Lead-free and RoHS compliant, it is supplied in tape and reel packaging.
PackageSOT-416
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1032R-T1-E3 technical specifications.
General
| Package/Case | SOT-416 |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 0.76mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1032R-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1032R-T1-E3 to view detailed technical specifications.
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