N-channel MOSFET, ideal for surface mount applications, features a 20V drain-source breakdown voltage and a continuous drain current of 200mA. This component offers a low drain-source on-resistance of 5 Ohms, with typical turn-on and turn-off delay times of 50ns. Operating across a wide temperature range from -55°C to 150°C, it is housed in a compact SC package with dimensions of 1.7mm (L) x 0.95mm (W) x 0.8mm (H). The device supports a gate-source voltage of 6V and has a maximum power dissipation of 300mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Vishay SI1032X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
5R
Fall Time
25ns
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Nominal Vgs
700mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
50ns
Weight
0.001058oz
Width
0.95mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1032X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1032X-T1-E3 to view detailed technical specifications.
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