N-channel MOSFET, ideal for surface mount applications, features a 20V drain-source breakdown voltage and a continuous drain current of 200mA. This component offers a low drain-source on-resistance of 5 Ohms, with typical turn-on and turn-off delay times of 50ns. Operating across a wide temperature range from -55°C to 150°C, it is housed in a compact SC package with dimensions of 1.7mm (L) x 0.95mm (W) x 0.8mm (H). The device supports a gate-source voltage of 6V and has a maximum power dissipation of 300mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Vishay SI1032X-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.8mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.001058oz |
| Width | 0.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1032X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1032X-T1-E3 to view detailed technical specifications.
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