P-channel MOSFET featuring 20V drain-source breakdown voltage and 145mA continuous drain current. This surface-mount device offers a low Rds(on) of 8 Ohms and a maximum power dissipation of 280mW. Designed with two channels, it operates across a wide temperature range of -55°C to 150°C and is packaged in a compact SOT563F. Ideal for applications requiring efficient switching with fast turn-on and turn-off times.
MountingSurface Mount
PolarityP-CHANNEL
Power280mW
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Technical Specifications
Vishay SI1033X-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
145mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
20R
Drain to Source Voltage (Vdss)
20V
Fall Time
30ns
Gate to Source Voltage (Vgs)
5V
Height
0.6mm
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
280mW
Rds On Max
8R
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
60ns
Turn-On Delay Time
55ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1033X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1033X-T1-E3 to view detailed technical specifications.
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