P-channel MOSFET featuring 20V drain-source breakdown voltage and 145mA continuous drain current. This surface-mount device offers a low Rds(on) of 8 Ohms and a maximum power dissipation of 280mW. Designed with two channels, it operates across a wide temperature range of -55°C to 150°C and is packaged in a compact SOT563F. Ideal for applications requiring efficient switching with fast turn-on and turn-off times.
MountingSurface Mount
PolarityP-CHANNEL
Power280mW
Quick Jump:
Technical Specifications
Vishay SI1033X-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 145mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.6mm |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 280mW |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1033X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1033X-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.