P-channel 1.8-V (g-s) Mosfet
PackageSOT
MountingSurface Mount
PolarityP-CHANNEL
Power170mW
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Technical Specifications
Vishay SI1037X-T1-E3 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 770mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 170mW |
| Rds On Max | 195mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1037X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1037X-T1-E3 to view detailed technical specifications.
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