N-channel MOSFET, 8V Vdss, 1.34A continuous drain current, and 86mR Rds On. Features include 5V gate-source voltage, 585pF input capacitance, and fast switching times with 6.8ns turn-on delay and 26ns turn-off delay. This surface-mount component is housed in a compact SC package with dimensions of 1.7mm (L) x 1.2mm (W) x 0.6mm (H). Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 236mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1050X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.34A
Drain to Source Resistance
86mR
Drain to Source Voltage (Vdss)
8V
Fall Time
35ns
Gate to Source Voltage (Vgs)
5V
Height
0.6mm
Input Capacitance
585pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Nominal Vgs
5V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
86mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
26ns
Turn-On Delay Time
6.8ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1050X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1050X-T1-GE3 to view detailed technical specifications.
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