Vishay
SI1056X-T1-E3
Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN
Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1056X-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.32A |
| Drain to Source Resistance | 89mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.6mm |
| Input Capacitance | 400pF |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 89mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1056X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1056X-T1-E3 to view detailed technical specifications.
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