Mosfet N-ch 20V 1.3A SOT563F
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1058X-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Resistance | 91mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 380pF |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 91mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1058X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1058X-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.