P-channel MOSFET transistor in SC package, designed for surface mount applications. Features a 12V Drain-source Voltage (Vdss) and 1.18A Continuous Drain Current (ID). Offers low on-resistance with a maximum of 130mR at a 8V Gate to Source Voltage (Vgs). Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 236mW. Includes fast switching characteristics with a 13ns turn-on delay and 27ns fall time.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1065X-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.18A |
| Drain to Source Resistance | 204mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 130MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.6mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 236mW |
| Rds On Max | 156mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1065X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1065X-T1-E3 to view detailed technical specifications.
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