P-channel MOSFET transistor in SC package, designed for surface mount applications. Features a 12V Drain-source Voltage (Vdss) and 1.18A Continuous Drain Current (ID). Offers low on-resistance with a maximum of 130mR at a 8V Gate to Source Voltage (Vgs). Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 236mW. Includes fast switching characteristics with a 13ns turn-on delay and 27ns fall time.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1065X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.18A
Drain to Source Resistance
204mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
130MR
Fall Time
27ns
Gate to Source Voltage (Vgs)
8V
Height
0.6mm
Input Capacitance
480pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
236mW
Rds On Max
156mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
13ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1065X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1065X-T1-E3 to view detailed technical specifications.
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