P-channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a continuous drain current of 1.18A and a drain-source voltage of 12V. Offers a maximum drain-source on-resistance of 156mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 236mW. Packaged in a compact SC-89 surface-mount package.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1065X-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
1.18A
Drain to Source Resistance
204mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
156mR
Fall Time
27ns
Gate to Source Voltage (Vgs)
8V
Height
0.6mm
Input Capacitance
480pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
156mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
13ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1065X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1065X-T1-GE3 to view detailed technical specifications.
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