P-Channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 1.06A continuous drain current. Offers a low drain-source on-resistance of 150mR at a gate-source voltage of 8V. Designed with a SC package, this component boasts fast switching characteristics with turn-on delay time of 14ns and fall time of 22ns. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1067X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.06A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 214mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 375pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Nominal Vgs | -950mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 236mW |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1067X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1067X-T1-GE3 to view detailed technical specifications.
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