P-Channel MOSFET for surface mount applications, featuring a 20V drain-source breakdown voltage and 1.06A continuous drain current. Offers a low drain-source on-resistance of 150mR at a gate-source voltage of 8V. Designed with a SC package, this component boasts fast switching characteristics with turn-on delay time of 14ns and fall time of 22ns. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1067X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.06A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
214mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
150mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
375pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Nominal Vgs
-950mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
236mW
Radiation Hardening
No
Rds On Max
150mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
48ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI1067X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1067X-T1-GE3 to view detailed technical specifications.
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