P-CHANNEL MOSFET, surface mount, featuring a 20V Drain-to-Source Voltage (Vdss) and 940mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance of 268mR, with an Rds On Max of 184mR. This component boasts fast switching speeds with a Turn-On Delay Time of 19ns and Fall Time of 31ns. Operating temperature range from -55°C to 150°C, with a Max Power Dissipation of 236mW. Packaged in Tape and Reel, this RoHS compliant device is constructed with a single channel and element.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1069X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
940mA
Drain to Source Resistance
268mR
Drain to Source Voltage (Vdss)
20V
Fall Time
31ns
Gate to Source Voltage (Vgs)
12V
Height
0.6mm
Input Capacitance
308pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
184mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
23ns
Turn-On Delay Time
19ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1069X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1069X-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
