P-channel MOSFET, 30V drain-source voltage, 200mA continuous drain current, and 244mΩ on-state resistance. Features a 1.2mm width, 1.7mm length, and 0.6mm height in a SOT563F package for surface mounting. Operates across a -55°C to 150°C temperature range with a 12V gate-source voltage. Includes 13ns turn-on delay and 36ns turn-off delay.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1071X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
244mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
-30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Height
0.6mm
Input Capacitance
315pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Nominal Vgs
-1.45V
Number of Channels
1
On-State Resistance
244mR
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
167mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-1.45V
Turn-Off Delay Time
36ns
Turn-On Delay Time
13ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1071X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1071X-T1-E3 to view detailed technical specifications.
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