P-channel JFET, surface mount, designed for efficient switching. Features a 30V drain-to-source breakdown voltage and a low drain-source on-resistance of 167mR (max). Operates with a gate-to-source voltage of 12V and a threshold voltage of -1.45V. Offers a continuous drain current of 200mA and a maximum power dissipation of 236mW. Packaged in tape and reel, this component is RoHS compliant and suitable for operation between -55°C and 150°C.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1071X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
244mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
167mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
315pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
236mW
Radiation Hardening
No
Rds On Max
167mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.45V
Turn-Off Delay Time
36ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI1071X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1071X-T1-GE3 to view detailed technical specifications.
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