P-channel JFET, surface mount, designed for efficient switching. Features a 30V drain-to-source breakdown voltage and a low drain-source on-resistance of 167mR (max). Operates with a gate-to-source voltage of 12V and a threshold voltage of -1.45V. Offers a continuous drain current of 200mA and a maximum power dissipation of 236mW. Packaged in tape and reel, this component is RoHS compliant and suitable for operation between -55°C and 150°C.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power236mW
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Technical Specifications
Vishay SI1071X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 244mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 167mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 315pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 236mW |
| Radiation Hardening | No |
| Rds On Max | 167mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.45V |
| Turn-Off Delay Time | 36ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1071X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1071X-T1-GE3 to view detailed technical specifications.
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