N-channel MOSFET with 30V drain-source voltage and 1.3A continuous drain current. Features low 93mΩ drain-source on-resistance and 280pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 236mW. This surface-mount component is housed in a compact 1.7mm x 1.2mm x 0.6mm package.
Resistance0.093R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1072X-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
1.3A
Drain to Source Resistance
93mR
Drain to Source Voltage (Vdss)
30V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
280pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
93mR
Resistance
0.093R
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
9ns
Turn-On Delay Time
13ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1072X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1072X-T1-E3 to view detailed technical specifications.
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