P-channel MOSFET with 30V drain-source voltage and 200mA continuous drain current. Features low 173mΩ Rds(on) at 10V Vgs, 26ns turn-on delay, and 28ns fall time. Surface mountable in a compact SC89-6 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 236mW.
Resistance0.173R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1073X-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
243mR
Drain to Source Voltage (Vdss)
30V
Fall Time
28ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
265pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
173mR
Resistance
0.173R
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
28ns
Turn-On Delay Time
26ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1073X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1073X-T1-E3 to view detailed technical specifications.
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