Vishay SI1073X-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 243mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 173MR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 265pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 236mW |
| Rds On Max | 173mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 26ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1073X-T1-GE3 to view detailed technical specifications.
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