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Technical Specifications
Vishay SI1073X-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
243mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
173MR
Fall Time
28ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
265pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
236mW
Rds On Max
173mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
28ns
Turn-On Delay Time
26ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI1073X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1073X-T1-GE3 to view detailed technical specifications.
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