N-channel small signal MOSFET for general-purpose applications. Features 20V drain-source breakdown voltage and 370mA continuous drain current. Offers 850mΩ maximum drain-source on-resistance. Operates within a -55°C to 150°C temperature range. Supplied in a 3-pin SC package for surface mounting, available on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power190mW
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Technical Specifications
Vishay SI1300BDL-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 850mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 35pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190mW |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 7ns |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1300BDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1300BDL-T1-E3 to view detailed technical specifications.
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