N-channel small signal MOSFET for general-purpose applications. Features 20V drain-source breakdown voltage and 370mA continuous drain current. Offers 850mΩ maximum drain-source on-resistance. Operates within a -55°C to 150°C temperature range. Supplied in a 3-pin SC package for surface mounting, available on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power190mW
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Technical Specifications
Vishay SI1300BDL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
370mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
850mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
35pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
190mW
Radiation Hardening
No
Rds On Max
850mR
Series
TrenchFET®
Turn-Off Delay Time
8ns
Turn-On Delay Time
7ns
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1300BDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1300BDL-T1-E3 to view detailed technical specifications.
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