The SI1302DL-T1-GE3 is a single N-CHANNEL MOSFET with a maximum continuous drain current of 600mA and a drain to source resistance of 480mR. It can withstand a maximum drain to source voltage of 30V and has a maximum power dissipation of 280mW. The device is designed for surface mount applications and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The SI1302DL-T1-GE3 is compliant with RoHS regulations and is available in tape and reel packaging with 3000 devices per package.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1302DL-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000219oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1302DL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1302DL-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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