P-channel, small signal MOSFET for general-purpose applications. Features a continuous drain current of 670mA and a drain-source breakdown voltage of 20V. Offers a maximum drain-source on-resistance of 430mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 290mW. Packaged in a SOT-323 (SC-70) surface-mount package, supplied on tape and reel. RoHS compliant.
PackageSOT-323
MountingSurface Mount
PolarityP-CHANNEL
Power290mW
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Technical Specifications
Vishay SI1303DL-T1-E3 technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
670mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
430mR
Fall Time
14ns
Gate to Source Voltage (Vgs)
12V
Height
0.039inch
Lead Free
Lead Free
Length
0.086inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290mW
Mount
Surface Mount
Nominal Vgs
-1.4V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
290mW
Radiation Hardening
No
Rds On Max
430mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
12.5ns
Turn-On Delay Time
9ns
Width
0.053inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI1303DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1303DL-T1-E3 to view detailed technical specifications.
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