N-channel, small-signal MOSFET for general-purpose applications. Features 30V drain-source voltage, 850mA continuous drain current, and 270mΩ drain-source on-resistance. Operates with a gate-source voltage up to 12V and a nominal threshold voltage of 1.3V. Packaged in a 3-pin SC-70 surface-mount case, this RoHS-compliant component offers fast switching with turn-on and turn-off delay times of 10ns and 5ns respectively. Maximum power dissipation is 370mW, with an operating temperature range of -55°C to 150°C.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power340mW
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Technical Specifications
Vishay SI1304BDL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
850mA
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
270mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Height
0.039inch
Input Capacitance
100pF
Lead Free
Lead Free
Length
0.086inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
370mW
Mount
Surface Mount
Nominal Vgs
1.3V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
340mW
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.3V
Turn-Off Delay Time
5ns
Turn-On Delay Time
10ns
Width
0.053inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI1304BDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1304BDL-T1-E3 to view detailed technical specifications.
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