The SI1305DL-T1-GE3 is a surface mount N-channel MOSFET from Vishay with a maximum drain-source voltage of 8V and a maximum drain current of 860mA. It has a maximum on-resistance of 280mR and a maximum power dissipation of 290mW. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is available in a tape and reel packaging with 3000 units per reel.
MountingSurface Mount
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Technical Specifications
Vishay SI1305DL-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 860mA |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 280MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1305DL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1305DL-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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