P-channel, surface-mount JFET with 12V drain-source breakdown voltage and 850mA continuous drain current. Features 290mR maximum drain-source on-resistance and 290mW power dissipation. Operates across a -55°C to 150°C temperature range. Includes 210ns turn-on delay and 450ns fall time. RoHS compliant, SC-70 package.
PackageSOT-323-3
Voltage12V
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1307EDL-T1-E3 technical specifications.
General
Package/Case
SOT-323-3
Continuous Drain Current (ID)
850mA
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
290mR
Fall Time
450ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290mW
Mount
Surface Mount
Nominal Vgs
-45V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
290mW
Radiation Hardening
No
Rds On Max
290mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-45V
Turn-Off Delay Time
910ns
Turn-On Delay Time
210ns
Voltage
12V
Compliance
RoHS
Compliant
Datasheet
Vishay SI1307EDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1307EDL-T1-E3 to view detailed technical specifications.
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