
P-CHANNEL MOSFET, 20V Drain-Source Voltage, 1.4A Continuous Drain Current. Features low Rds On of 150mR at 10V, 4.5V, and 270mR at 5V, 5V. Operates with a 450mV threshold voltage and 8V gate-source voltage. Surface mount SOT-323 package with 500mW max power dissipation, suitable for -50°C to 150°C operation. Includes fast switching times with 12ns turn-on and 23ns turn-off delays.
Vishay SI1317DL-T1-GE3 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 272pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 450mV |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.004395oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1317DL-T1-GE3 to view detailed technical specifications.
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