P-CHANNEL MOSFET, 20V Drain-Source Voltage, 1.4A Continuous Drain Current. Features low Rds On of 150mR at 10V, 4.5V, and 270mR at 5V, 5V. Operates with a 450mV threshold voltage and 8V gate-source voltage. Surface mount SOT-323 package with 500mW max power dissipation, suitable for -50°C to 150°C operation. Includes fast switching times with 12ns turn-on and 23ns turn-off delays.
PackageSOT-323
MountingSurface Mount
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Vishay SI1317DL-T1-GE3 technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
1.4A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
20V
Fall Time
18ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
272pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
400mW
Rds On Max
150mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
450mV
Turn-Off Delay Time
23ns
Turn-On Delay Time
12ns
Weight
0.004395oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI1317DL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1317DL-T1-GE3 to view detailed technical specifications.
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