N-channel MOSFET, TrenchFET® series, designed for surface mount applications in a SOT-323-3 package. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 2.5 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Includes fast switching characteristics with turn-on delay time of 3.8ns and fall time of 4.8ns. RoHS compliant and lead-free.
PackageSOT-323-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1330EDL-T1-E3 technical specifications.
General
Package/Case
SOT-323-3
Continuous Drain Current (ID)
240mA
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2.5R
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
12.8ns
Turn-On Delay Time
3.8ns
Weight
0.004395oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1330EDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1330EDL-T1-E3 to view detailed technical specifications.
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