
N-channel MOSFET, TrenchFET® series, designed for surface mount applications in a SOT-323-3 package. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 2.5 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Includes fast switching characteristics with turn-on delay time of 3.8ns and fall time of 4.8ns. RoHS compliant and lead-free.
Vishay SI1330EDL-T1-E3 technical specifications.
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 240mA |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 12.8ns |
| Turn-On Delay Time | 3.8ns |
| Weight | 0.004395oz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1330EDL-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
