N-channel MOSFET, TrenchFET® series, designed for surface mount applications. Features 20V drain-source breakdown voltage and 1.6A continuous drain current. Offers a maximum drain-source on-resistance of 150mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 568mW. Packaged in a 6-pin SC-70 (SOT-363) tape and reel for automated assembly.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power568mW
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Technical Specifications
Vishay SI1400DL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.6A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
150MR
Fall Time
8ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
568mW
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
568mW
Rds On Max
150mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
14ns
Turn-On Delay Time
10ns
Weight
0.000265oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1400DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1400DL-T1-E3 to view detailed technical specifications.
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