
The SI1402DH-T1-GE3 is a 30V 2.7A surface mount TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 950mW and is RoHS compliant. The device features a fall time of 7ns and a turn-off delay time of 13ns, making it suitable for high-speed applications.
Vishay SI1402DH-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 950mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1402DH-T1-GE3 to view detailed technical specifications.
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