The SI1403DL-T1-E3 is a P-channel MOSFET with a continuous drain current of 1.4A and a drain to source resistance of 180mR. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is packaged in a SOT-363 package and is RoHS compliant. It is rated for a maximum power dissipation of 568mW and has a turn-off delay time of 21ns and a turn-on delay time of 8ns.
PackageSOT-363
PolarityP-CHANNEL
Power625mW
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Technical Specifications
Vishay SI1403DL-T1-E3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | SI1 |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.000988oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1403DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1403DL-T1-E3 to view detailed technical specifications.
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