N-channel MOSFET featuring 20V drain-source breakdown voltage and 3.1A continuous drain current. Surface mountable in a TO-236-3 (SC70-6) package, this component offers a low 65mΩ maximum drain-source on-resistance at a nominal 4.5V gate-source voltage. Key switching characteristics include a 27ns turn-on delay and 29ns fall time. Maximum power dissipation is 1W, with an operating temperature range of -55°C to 150°C. This RoHS compliant device is supplied on tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay SI1406DH-T1-E3 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 65mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 155pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 450mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 450mV |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1406DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1406DH-T1-E3 to view detailed technical specifications.
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