P-channel MOSFET with 200V drain-source breakdown voltage and 300mA continuous drain current. Features low 5 Ohm drain-source on-resistance at 10V gate-source voltage and 1.56W power dissipation. Surface mountable in a SOT-363-6 package, this component offers fast switching with 6ns turn-on and 12ns fall times. Operating temperature range from -55°C to 150°C, it is RoHS compliant.
PackageSOT-363-6
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Vishay SI1419DH-T1-E3 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 3.98R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 5MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -4.5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -4.5V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1419DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1419DH-T1-E3 to view detailed technical specifications.
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