P-channel Power MOSFET, 200V drain-source voltage, 0.3A continuous drain current. Features TrenchFET process technology for enhanced performance. Housed in a 6-pin SC-70 (MO-203AB) surface-mount package with gull-wing leads, measuring 2mm x 1.25mm x 1mm. Single Quad Drain configuration with a maximum gate threshold voltage of 4.5V.
PackageSC-70
MountingSurface Mount
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Technical Specifications
Vishay SI1419DH-T1-GE3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SC |
| Package/Case | SC-70 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MO-203AB |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.3A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 5000@10VmOhm |
| Typical Gate Charge @ Vgs | 4.1@10VnC |
| Typical Gate Charge @ 10V | 4.1nC |
| Maximum Power Dissipation | 1560mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SI1419DH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1419DH-T1-GE3 to view detailed technical specifications.
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