N-channel MOSFET, SOT-363 package, featuring 20V drain-source voltage and 4A continuous drain current. Offers low on-resistance with Rds On Max of 33mR at 10Vgs. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.8W. Designed for surface mounting, this component is RoHS compliant and supplied on tape and reel.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1424EDH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1.6us |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 33mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 5.6us |
| Turn-On Delay Time | 150ns |
| Weight | 0.000265oz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1424EDH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1424EDH-T1-GE3 to view detailed technical specifications.
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