P-channel MOSFET transistor featuring a -20V drain-to-source voltage and a continuous drain current of 2A. Offers a low on-resistance of 50mΩ at a gate-to-source voltage of -4.5V, with a threshold voltage of -400mV. This surface-mount component, housed in a SOT-363 package, boasts a maximum power dissipation of 2.8W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a turn-on delay of 90ns and a fall time of 2.3µs.
PackageSOT-363
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1427EDH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 2.3us |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 64mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 5.2us |
| Turn-On Delay Time | 90ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1427EDH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1427EDH-T1-GE3 to view detailed technical specifications.
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