P-channel MOSFET, surface mount, designed for efficient switching. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.9A. Offers a low drain-source on-resistance of 150mΩ at a nominal gate-source voltage of -3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 950mW. Packaged in a 6-pin SC-70 tape and reel for automated assembly.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power950mW
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Technical Specifications
Vishay SI1433DH-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 950mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 950mW |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1433DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1433DH-T1-E3 to view detailed technical specifications.
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