P-channel MOSFET, surface mount, designed for efficient switching. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.9A. Offers a low drain-source on-resistance of 150mΩ at a nominal gate-source voltage of -3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 950mW. Packaged in a 6-pin SC-70 tape and reel for automated assembly.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power950mW
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Technical Specifications
Vishay SI1433DH-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
150mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
950mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
950mW
Radiation Hardening
No
Rds On Max
150mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
18ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI1433DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1433DH-T1-E3 to view detailed technical specifications.
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