P-channel MOSFET, surface mount, in a SOT-363 package. Features a -30V Drain to Source Voltage (Vdss) and 4A Continuous Drain Current (ID). Offers a low 54mR Drain to Source Resistance (Rds On Max) and 1.6W Power Dissipation. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-363
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI1443EDH-T1-GE3 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 420ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | -600mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 1800ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.000265oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1443EDH-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1443EDH-T1-GE3 to view detailed technical specifications.
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