
P-channel MOSFET transistor, surface mount, 20V drain-source voltage, 3.2A continuous drain current, and 80mΩ maximum drain-source on-resistance. Features include a 155mΩ drain-to-source resistance, 5ns turn-on delay, 9ns fall time, and 22ns turn-off delay. Operates with a 12V gate-to-source voltage and a -1.5V threshold voltage. Packaged in a 6-pin SOT-363-6 (SC-70) in tape and reel, this RoHS compliant component offers a maximum power dissipation of 2.78W and an operating temperature range of -55°C to 150°C.
Vishay SI1469DH-T1-E3 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 155mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.78W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000265oz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1469DH-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
