N-channel MOSFET, 20V drain-source breakdown voltage, 4.6A continuous drain current, and 49mΩ maximum drain-source on-resistance. Features include 8.5ns turn-on delay, 35ns turn-off delay, and 45ns fall time. This surface-mount component operates within a -55°C to 150°C temperature range and offers 1.5W maximum power dissipation. Packaged in a 6-pin SC-70 tape and reel.
Vishay SI1488DH-T1-E3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 49mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 950mV |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8.5ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1488DH-T1-E3 to view detailed technical specifications.
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