Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a 30V drain-source voltage, 630mA continuous drain current, and a low 480mΩ drain-source on-resistance. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 270mW. Packaged in a compact SC-70, 6-pin surface-mount configuration, this RoHS-compliant component offers fast switching speeds with turn-on delay times as low as 4ns.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1539DL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
630mA
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
940MR
Fall Time
8ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
270mW
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
270mW
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.6V
Turn-Off Delay Time
5ns
Turn-On Delay Time
4ns
Weight
0.000265oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1539DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1539DL-T1-E3 to view detailed technical specifications.
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