Dual N-channel and P-channel MOSFET, surface mountable in an SC package. Features 20V drain-source breakdown voltage and 1.9 Ohm drain-source on-resistance. Operates with a gate-source voltage of 12V and a nominal threshold voltage of 1.5V. Offers continuous drain current of 300mA for N-channel and 410mA for P-channel. Maximum power dissipation is 270mW, with operating temperatures from -55°C to 150°C. RoHS compliant.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1551DL-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.9R |
| Dual Supply Voltage | 20V |
| Fall Time | 20ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Polarization | N |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 1.9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 8.5ns |
| Turn-On Delay Time | 23ns |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1551DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1551DL-T1-E3 to view detailed technical specifications.
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