Dual N-channel and P-channel MOSFET, surface mount, in a 6-pin SOT-363 package. Features 20V drain-source voltage (Vdss) for the N-channel and 8V for the P-channel. Continuous drain current (ID) is 660mA for the N-channel and 570mA for the P-channel. Offers a maximum drain-source on-resistance (Rds On) of 385mR. Operates from -55°C to 150°C with a maximum power dissipation of 270mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1555DL-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 600MR |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 385mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 10ns |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1555DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1555DL-T1-E3 to view detailed technical specifications.
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