Dual N-channel and P-channel MOSFET, 20V Drain-Source Voltage (Vdss), with a continuous drain current of 1.13A. Features a low Drain-Source On Resistance (Rds On) of 280mΩ and 490mΩ. This surface-mount component operates within a temperature range of -55°C to 150°C and has a power dissipation of 570mW. Supplied in a 6-pin SC-70 package on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power570mW
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Technical Specifications
Vishay SI1563DH-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.13A |
| Drain to Source Resistance | 490mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 490mR |
| Dual Supply Voltage | 20V |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 570mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 570mW |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1563DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1563DH-T1-E3 to view detailed technical specifications.
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